| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02148
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02172
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02592
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2004-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38a0c9ce50c577a7f4c11a04f7ea0637
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89c3255cf02122d4ad9ebb3b44d4ac24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17175ae5d3d6ebe7e2e2735035e276a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58a9fcb2e7b4a94368f2b58ea72eece5 |
| publicationDate |
2006-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20060024189-A |
| titleOfInvention |
Multilayer dielectric film of microelectronic device and manufacturing method thereof |
| abstract |
A multilayer dielectric film of a microelectronic device having improved leakage current characteristics and improved dielectric constant is provided. The multilayer dielectric film of the microelectronic device may be formed of an amorphous M 1-x Si x O y or M 1-x Si x O y N z lower dielectric layer and an amorphous M'O y or M'O y N z upper portion formed on the lower dielectric layer. And a dielectric film.n n n n Multi-layer dielectric film, silicate film, silicate nitride film, metal oxide film, metal oxynitride film |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7605067-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9349879-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8723250-B2 |
| priorityDate |
2004-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |