http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060022408-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_65e6cc42bb2719da1d60772d005416f5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d2e0e68876f7d50e02c76030a3cdaed |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1454 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2004-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d64c9f116457dd6b3804a8fbd1aca20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96cb06d3ce28f1ee2d7f01a4a647e675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26576820b7366674f6c7f422545a0d8b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3bd4cb0db5d6a94a74e6c42035947e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa2689d2f20367e0efe61d134d18921f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f12223f880d20246b37f90acc7309fcd |
| publicationDate | 2006-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060022408-A |
| titleOfInvention | Ceria slurry for chemical mechanical polishing and its manufacturing method |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing slurry, which is used in a CMP process for an STI process, which is essentially applied to an ultra-high density semiconductor manufacturing process having a design rule of 256 mega DRAM or more, for example, 0.13 μm or less. It relates to a slurry having a high selectivity ratio of the oxide layer to the layer and a method for producing the same. The present invention is suitable for the STI process of ultra-high density semiconductor manufacturing process of 0.13㎛ or less by appropriately operating the method and apparatus for pretreatment of abrasive particles, dispersion equipment and its operation method, method and amount of adding chemical additives, transporting device for samples and the like. The present invention relates to the preparation of high performance nano ceria slurries that are essential for a CMP process.n n n n CMP, slurry, surface area, anionic polymer dispersant, macroparticles, particle size, interfacial potential behavior, milling |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102155222-B1 |
| priorityDate | 2004-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.