| abstract |
The present invention relates to a metal chemical mechanical polishing (CMP) slurry composition having a high polishing rate, low risk of defects, and excellent storage stability and polishing reproducibility. More specifically, the present invention relates to a peroxide compound, an inorganic acid, and at least one carboxyl group as an oxidizing agent. The branch relates to an organic acid compound, a slurry composition for metal CMP containing polyethylene glycol (PEG) as a nonionic surfactant, metal oxide and deionized water as an abrasive.n n n The slurry composition of the present invention is excellent in storage stability or dispersion stability by containing PEG, and has a high polishing rate. Therefore, when using the slurry according to the invention, high productivity in the semiconductor manufacturing process can be expected.n n n In addition, defects such as corrosion or cracks during polishing are significantly reduced, thereby ensuring a high yield in the semiconductor manufacturing process. |