http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060017173-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_efd77c1983329ca444312479161a8c18 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2004-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_658c23bb9ea47eaa98edc7975f273a42 |
| publicationDate | 2006-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060017173-A |
| titleOfInvention | Method of forming insulating film of semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an insulating film of a semiconductor device, and more particularly, to a semiconductor capable of suppressing damage to other films existing on and under a PMD film due to impurities in a PMD film, which is an interlayer insulating film, and defects during contact hole processing. A method of forming an insulating film of a device.n n n The object of the present invention is to form a PMD liner film on a semiconductor substrate on which a predetermined structure including a gate electrode, a source / drain, etc. is formed; Forming a first silicon rich oxide film on the liner oxide film; Forming and planarizing a PMD film on the first silicon rich oxide film; And forming a second silicon rich oxide film on the planarized PMD film.n n n Therefore, the method for forming an insulating film of the semiconductor device of the present invention by forming a silicon rich oxide film on the upper and lower portions of the PMD film and performing a plasma treatment before filling the contact metal to prevent the defect of the semiconductor device that may be caused by impurities in the PMD film to improve the yield There is an effect to improve and improve the electrical characteristics and reliability of the device.n n n n Silicon Rich Oxide (SRO), PMD, BPSG, Impurity Diffusion, Contact Hole, Plasma Treatment |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100763691-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100881510-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100821481-B1 |
| priorityDate | 2004-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
Total number of triples: 20.