http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060013272-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 2004-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_890be22fe103ae1bb0ebde0bea372279 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3ef1520944d9f90eb4ee21bb2931ce6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d04d2732594e7ee8784c6979bdd054a |
| publicationDate | 2006-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060013272-A |
| titleOfInvention | Chalcogen compound sputter deposition equipment and method, and method for forming phase change memory device using the same |
| abstract | The impurity doped chalcogenide sputtering method includes providing a chalcogenide target and a pulsed direct current bias that swings between negative and positive values. An inert gas for sputtering the target and a reaction gas for doping the chalcogenide are supplied into the reaction chamber. When a negative direct current bias is provided, the elements constituting the chalcogenide from the chalcogenide target are sputtered by an inert gas plasma to combine with the reaction gas to form a chalcogenide thin film on the substrate. When a positive direct current bias is provided, ions constituting an inert gas plasma locally accumulated on the chalcogenide target surface are released from the chalcogenide target. The period in which a positive direct current bias is also provided allows sufficient reaction between the chalcogenide target constituent elements and the reactant gas to occur. Therefore, without discharging due to inert gas accumulation, the chalcogenide thin film with increased impurity doping concentration can be formed and the resistivity of the chalcogenide thin film can be increased. Such a chalcogenide deposition method of the present invention can be particularly usefully applied to the method of forming a phase change memory device.n n n n Chalcogenide, sputter deposition, phase change memory device |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100829602-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8299450-B2 |
| priorityDate | 2004-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.