| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-884
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8413
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2004-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcd2c374d0deb74624fd2b378b042770
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_890be22fe103ae1bb0ebde0bea372279 |
| publicationDate |
2006-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20060012848-A |
| titleOfInvention |
A method of forming a conductive layer having a local high resistance region and a semiconductor device manufactured using the same |
| abstract |
A conductive layer forming method having a local high resistance region and a semiconductor device manufactured using the same are provided. The method includes forming a conductive layer over the semiconductor substrate. A molding insulating film is formed on the conductive layer. A via hole exposing a predetermined region of the conductive layer is formed in the molding insulating layer. A nitriding process is performed on the conductive layer of the portion exposed by the via hole. After performing the nitriding process, a phase change material film may be formed to fill at least the via hole.n n n n Phase change, transition metal, nitride, metal nitride layer, resistivity |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101503188-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8551805-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101270435-B1 |
| priorityDate |
2004-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |