http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060010933-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2004-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88f59f1331fc487c1b43c512c203b00f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_213f9df4d291fdc994c87e5c1bb2a73e |
| publicationDate | 2006-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060010933-A |
| titleOfInvention | Trench type isolation layer formation method of semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor manufacturing technology, and more particularly, to a device isolation process for electrical separation between devices, and more particularly, to a method of forming a trench type device isolation film. The present invention provides a method for forming a trench type device isolation film for a semiconductor device which can prevent loss of the liner nitride film in the trench top corner portion during HDP oxide deposition while securing the gap fill characteristics of the HDP oxide film applied as the trench buried oxide film. have. The present invention proposes a method in which the liner nitride film is thickly deposited in the trench top corner part by setting a condition in which the step coverage characteristic is poor when the liner nitride film is intentionally deposited. In this case, even when the liner nitride film in the trench top corner portion is lost due to plasma damage during the deposition of the HDP oxide film applied as the trench buried oxide film, the liner nitride film is deposited relatively thicker in the trench top corner portion than other portions. The liner nitride film may be left. Accordingly, the liner oxide film deposition process for protecting the liner nitride film may be omitted or the thickness of the liner nitride film may be reduced to a minimum thickness, thereby securing the gapfill characteristics of the HDP oxide film. n n n n Trench element isolation, liner nitride, step coverage, plasma damage, gap fill margin |
| priorityDate | 2004-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.