http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060008478-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
filingDate 2004-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6630d7b03eb08d79480451c0883d5a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fbe4d940187b4a5b398c30fa1a186ba
publicationDate 2006-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20060008478-A
titleOfInvention Capacitor Formation Method of Semiconductor Device
abstract Disclosed is a method of forming a capacitor of a semiconductor device of the present invention. Disclosed is a semiconductor device comprising: providing a semiconductor substrate on which a storage node contact plug is formed; Recessing the storage node contact plug such that a predetermined portion of the storage node contact plug is removed; Forming an interlayer dielectric layer on a substrate resultant comprising the recessed storage node contact plug; Etching back the interlayer insulating film; Sequentially forming an etch stop nitride film and an oxide film on the substrate product including the interlayer insulating film; Etching the oxide film and the etch stop nitride film so that a portion of the interlayer insulating film is exposed; Wet etching the interlayer dielectric layer to expose the storage node contact plugs; Forming a storage node by forming a conductive layer on the etched interlayer insulating layer and the oxide layer; And sequentially forming a dielectric layer and a plate node on the storage node.
priorityDate 2004-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 20.