http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060006393-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
filingDate 2004-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2a7ef28023be91d5ba15eafad505418
publicationDate 2006-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20060006393-A
titleOfInvention Device Separating Method of Semiconductor Device
abstract The present invention discloses a method of forming a device isolation layer of a semiconductor device capable of securing a rounding profile of a top corner of a trench, as well as minimizing the generation of motes at the upper edge of the device isolation layer. The disclosed method comprises the steps of providing a silicon substrate having active and field regions defined therein; Sequentially forming a pad oxide film, a polysilicon film, and a pad nitride film exposing a field region on the silicon substrate; Etching the field region of the substrate exposed by the pad nitride layer to form a trench; Performing a cleaning process on the substrate including the trench to partially recess the pad oxide layer; Rounding the upper corner of the trench by performing a monthly oxidation process on the resulting trench; Sequentially forming a linear oxide film, a linear nitride film, and a buried oxide film on the substrate on which the rounding process is completed; CMP the resultant until the pad nitride layer is exposed; Removing the pad nitride film; And forming the device isolation layer by etching back the resultant until the substrate is exposed.
priorityDate 2004-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123

Total number of triples: 14.