http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060004673-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2baf849d216e689ecc40ccc931a7a7bc |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
filingDate | 2004-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61420cdd2c01ba119556edc46011abef http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f0d7b774dce0fe1491977f4b9add11b |
publicationDate | 2006-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20060004673-A |
titleOfInvention | Underlayer film forming composition for forming a porous underlayer film and a porous underlayer film |
abstract | Provided is an underlayer film used in the lithography process of semiconductor device manufacture, which does not intermix with the photoresist layer and has a large dry etching rate compared to the photoresist. Specifically, an underlayer film-forming composition for forming a porous underlayer film for use in the manufacture of a semiconductor device containing a foaming agent, an organic material and a solvent, or a polymer and a solvent having a foamable group. The underlayer film formed of this composition consists of a porous structure which has a cavity inside, and can achieve a large dry etching rate. |
priorityDate | 2003-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 341.