http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060001133-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b1007735376d07808ebe297f823b2829
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2201-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2201-121
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
filingDate 2004-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9dcf250b74a018ce1bb3514d038e6223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd55752cf3207a4e193575e0fd416a0c
publicationDate 2006-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20060001133-A
titleOfInvention Array substrate for liquid crystal display device and manufacturing method thereof
abstract The present invention relates to an array substrate for a liquid crystal display device.n n n Conventionally, a transparent conductive material, a first metal, a first insulating material, and a semiconductor material are stacked on a substrate and a selective etching is performed through a mask process using diffraction exposure. Produced.n n n However, since the exposure amount of the semi-transmissive area in the slit shape must be adjusted on the mask during the mask process using the diffraction exposure method, a lot of trial and error must be determined to determine the slit width and spacing, and compared with the mask process using a general mask. There is a disadvantage in that the occurrence of defects is significantly high, the production yield falls.n n n The present invention provides a manufacturing method for manufacturing an array substrate by performing a mask process four or three times to reduce the manufacturing cost by eliminating one mask process compared to the conventional, and proceeds the mask process using a high diffraction exposure method By manufacturing the array substrate without suppressing the occurrence of defects it is possible to improve the production yield. n n n n Mask reduction, ink jet printing, conductive polymer material, AP plasma
priorityDate 2004-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425762086
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23964
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419405613
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419491804
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359268
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23932
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23976
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458391465

Total number of triples: 26.