http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050122636-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f1cdac90c4272d2ed510122d7153738 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76871 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2004-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecafacde1b3d112c6ad0dff8c2028156 |
| publicationDate | 2005-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050122636-A |
| titleOfInvention | Method of manufacturing a semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and is made of a porous material including a large number of pores. Forming an insulating film or forming a dual damascene pattern consisting of trenches and via holes in the low dielectric insulating film, and forming a dense insulating film on the entire surface of the low dielectric insulating film except for the bottom of the via hole, thereby exposing the pores of the low dielectric insulating film Prevents the increase in mechanical strength, thereby improving process reliability and device electrical properties. |
| priorityDate | 2004-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.