http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050122122-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37eb7cfa3558a58bbb336dd2190e210a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-04 |
| filingDate | 2004-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75ffa0acebe8aeaec406a260e86c1167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cdf527f9a24627ddfa300a4fff89f42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41205ec19b46b044840d98d305603d33 |
| publicationDate | 2005-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050122122-A |
| titleOfInvention | Etchant composition for pixel layer of fpd |
| abstract | The present invention relates to an etching liquid composition of a transparent conductive film used for pattern etching of an amorphous indium tin oxide (ITO) film and an indium zinc oxide (IZO) film, which are transparent conductive films, in a manufacturing process of a flat panel display such as a thin film transistor liquid crystal display device. Al 2 (SO 4 ) to act as a selective etch inhibitor to prevent etching of aluminum, molybdenum, copper, titanium metals, etc. used as gate or source / drain films other than 1 to 10% by weight of concentrated sulfuric acid and transparent conductive films 3 , M 2 MoO 4 (M = Na or K or Li or NH 4 ) or 0.1 to 5% by weight of the metal etch inhibitor selected from azole compounds, or mixtures thereof, and the remainder is composed of water, the transparency In order to adjust the etching rate to the etching liquid composition for a whole film, 0.1-5 weight% oxidizing agent was further added, It is characterized by the above-mentioned. In addition, in order to completely control the change over time, 5 to 50% by weight of ethylene glycol, polyethylene glycol, acetic acid such as acetic acid, characterized in that additionally added. The etching solution for the transparent conductive film according to the present invention has a property of removing residues and changes over time when etching and having etching selectivity with respect to a single metal or alloy film such as aluminum, molybdenum, copper, and titanium used as gate, source and drain metals. There is an advantage of improving the process yield. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112342548-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013077580-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112342548-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101333551-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103890232-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116024574-A |
| priorityDate | 2004-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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