| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2004-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7638fcf80878f3779aaf68a6f4f7294c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d1094d6ea5705c7888b5c9c6074d8f5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e55aefd56b1221096ced80ce46dcee9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64862d96c71694676103ca3da7e4944a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7624286b595ddaea2c59309d093fadf |
| publicationDate |
2005-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20050119991-A |
| titleOfInvention |
Methods of selectively forming an epitaxial semiconductor layer on a single crystalline semiconductor and semiconductor devices fabricated using the same |
| abstract |
Methods of selectively forming an epitaxial semiconductor layer on a single crystal semiconductor and semiconductor devices fabricated using the same are provided. These methods include forming a single crystal epitaxial semiconductor layer and a polycrystalline epitaxial semiconductor layer on the single crystal semiconductor and the polycrystalline semiconductor pattern using the main semiconductor source gas and the main etching gas, respectively. The polycrystalline epitaxial semiconductor layer is removed using a selective etching gas. The main gases and the selective etching gas are repeatedly supplied at least twice alternately to form an elevated single crystal epitaxial semiconductor layer having a selectively desired thickness on the single crystal semiconductor. The selective etching gas suppresses the formation of an epitaxial semiconductor layer on the polycrystalline semiconductor pattern. Provided are semiconductor devices formed using the above methods. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7855126-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9064960-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8703592-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100941545-B1 |
| priorityDate |
2004-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |