| abstract |
The present invention relates to photoactive components, in particular solar cells, composed of an organic layer and formed by one or more stacked pi, ni, and / or pin diodes. The diode is characterized in that it comprises at least one p-doped transport layer or n-doped transport layer having an optical bandgap larger than the photoactive layer. Individual diodes are characterized by high internal quantum yields, but can be optically thin (peak absorption <80%). According to the present invention, high external quantum yields are obtained by using light traps to enlarge the optical path of incident light in a diode or by stacking a plurality of such diodes, the transition between the two diodes being for the purpose of improved recombination and generation. Is facilitated by a transition layer. Both forms of embodiments have a number of specific advantages using doped transport layers with large bandgap. |