| abstract |
The present invention relates to a photoresist composition capable of preventing development defects of a photoresist pattern and a pattern forming method using the same, wherein the composition is applied onto an object for patterning, and a monophenylsulfonium salt, a triphenylsulfonium salt, or a mixture thereof is used. It includes 0.1 to 0.5% by weight of a photoacid generator, 2 to 10% by weight of a polymer resin and an extra solvent. The photoresist composition having the above-described composition has a vertical profile, no footing phenomenon occurs on the bottom surface, and can form a photoresist pattern without loss on top. |