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filingDate 2004-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33821f8c2e75491466ccf331119e648e
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publicationDate 2005-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20050111415-A
titleOfInvention Method for manufacturing a semiconductor device
abstract BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, wherein a thin film resistor and a capacitor are formed at the same time, a thin film resistor is formed on a metal line, and then a resistance per unit area of a substrate can be increased by connecting the thin film resistor in series. And a capacitor and a resistor capable of improving device characteristics and reducing process cost.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101096524-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100909562-B1
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type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 34.