| abstract |
Provided is a method for producing a single crystal of transparent, low dislocation density, uniform thickness, high quality, and bulky group III elemental nitride with good yield. Heating a reaction vessel containing at least one metal element selected from the group consisting of alkali metals and alkaline earth metals and at least one group III element selected from the group consisting of gallium (Ga), aluminum (Al) and indium (In) To form a flux of the metal element, introduce a nitrogen-containing gas into the reaction vessel, and react the group III element with nitrogen in the flux to grow a single crystal of group III element nitride. In the growth of the single crystal, the flux is agitated by shaking the reaction vessel or the like. |