| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242cc8d15c771395b920cc7de452da6a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01F23-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-30 |
| filingDate |
2004-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a382316a0d029a32fcaf4b7940f8cbcf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35033448a14c4092423fc734deaf38b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e27f7680ec9f79bcdc7dfecc45cc352
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9150c2616742678e53b4eb10df8fc5dd |
| publicationDate |
2005-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20050109075-A |
| titleOfInvention |
Method for forming oxide coating film, oxide coating film and coating film structure |
| abstract |
An object of the present invention is to form an oxide film having good surface morphology and crystal quality in forming an oxide film by an organometallic chemical vapor deposition method using two or more kinds of organometallic compound source gas and oxygen gas. A film forming apparatus having a first supply hole 11A, a second supply hole 11B, a third supply hole 11C, and a film forming chamber 7 is used. The first source gas A containing the first organometallic compound is supplied into the chamber 7 through the first supply hole 11A. The second source gas B containing the second organometallic compound is supplied into the chamber 7 through the second supply hole 11B. Oxygen gas C is supplied into the chamber 7 through 11 C of supply holes. The oxygen gas D is configured to contact the first source gas E before the oxygen gas D is mixed with the second source gas F in the chamber 7. |
| priorityDate |
2003-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |