http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050108446-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61L2300-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61L2300-40 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61F13-0289 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61L26-0066 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2004-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8a3a81cb1efee513159aaa2b36b5878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b1ddb513f6457f1a05f6e1f1894ee45 |
| publicationDate | 2005-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050108446-A |
| titleOfInvention | Method of manufacturing semiconductor device |
| abstract | In the copper wiring forming method of a semiconductor device, an interlayer insulating film is first formed on a semiconductor substrate, and a plurality of openings are formed in the interlayer insulating film. Subsequently, copper wirings are formed in the openings. Subsequently, as the core of the present invention, nitrogen is ion implanted into the interlayer insulating film between the copper wirings to form a leakage current prevention region. This suppresses the leakage current between the copper wirings regardless of the high integration of the semiconductor device, thereby ensuring the reliability of the semiconductor device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11164959-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10541128-B2 |
| priorityDate | 2004-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.