http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050106547-A

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filingDate 2004-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f998542423247988802351ecdac0ab3
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publicationDate 2005-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20050106547-A
titleOfInvention A method for manufacturing polycrystalline semiconductor active layer, the active layer by the same method, and flat panel display with the active layer
abstract The present invention provides a semiconductor active layer crystallization method comprising a laser irradiation step for polycrystallizing a semiconductor active layer, wherein the atmosphere in which the laser irradiation step is performed contains oxygen, and the oxygen content of the atmosphere is determined in advance of the semiconductor active layer. Provided are a semiconductor active layer crystallization method and a semiconductor active layer, and a flat panel display device having the same, wherein the semiconductor active layer has a predetermined oxygen content to have a value equal to or less than a set surface roughness.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100964226-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7964417-B2
priorityDate 2004-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.