http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050106546-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_154f5a8a983d88f296117dcc92946ab4 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02675 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate | 2004-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f998542423247988802351ecdac0ab3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0601334e1e47cf37dbda341fdacb8435 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4c9e8936733d437e3dae51b3fefca98 |
| publicationDate | 2005-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050106546-A |
| titleOfInvention | A method for manufacturing polycrystalline semiconductor active layer, the active layer by the same method, and flat panel display with the active layer |
| abstract | The present invention provides a semiconductor active layer crystallization method comprising a laser irradiation step for polycrystallizing a semiconductor active layer, wherein the atmosphere in which the laser irradiation step is performed contains oxygen, and the oxygen content of the atmosphere is determined by the semiconductor active layer crystallization. A semiconductor active layer crystallization method, a semiconductor active layer thereby, and a flat panel display device having the same are provided. |
| priorityDate | 2004-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.