| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b1007735376d07808ebe297f823b2829 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M2005-1586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M2039-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M2005-1581
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M2039-027 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M5-158
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M25-0612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M5-14248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M39-0247 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 |
| filingDate |
2004-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8134ee60c79445b38acd5bf820de5e04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4057dfd7bae801c6cbf2f9c42e75bdf6 |
| publicationDate |
2005-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20050104789-A |
| titleOfInvention |
Fabrication method of polycrystalline liquid crystal display device |
| abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a polysilicon liquid crystal display device, and in particular, to form a silicon nitride film constituting an insulating layer in order to form a stepped contact hole in a contact hole forming process of connecting a source drain electrode with an active layer. As a result, the etching ratio of the silicon nitride film and the silicon oxide film is the same to form a stepped contact hole. Due to the stepped contact hole, disconnection is prevented in the source and drain electrodes formed in the contact hole, thereby reducing the occurrence of defects. |
| priorityDate |
2004-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |