http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050104770-A

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filingDate 2004-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d20746739faf787fc4511713271497da
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publicationDate 2005-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20050104770-A
titleOfInvention Semiconductor nano structure and method of forming the same
abstract Disclosed are a semiconductor nanostructure comprising a germanium nanostructure on a surface of a germanium structure and a method for forming a semiconductor nanostructure, the method comprising irradiating a pulsed laser to a semiconductor substrate.n n n In the method of the present invention, it is preferable to use a pulse laser of picoseconds or less femtoseconds, and the laser irradiation is preferably made of laser fluence of 14 (J / Cm 2 ) or more. In addition, in the structure of the present invention, the nanostructure has a radius of 1 to 100 nanometers in a spherical and hemispherical shape.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101363478-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100762291-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014007500-A1
priorityDate 2004-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 30.