| abstract |
A semiconductor device having a pin-pet and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor substrate, a plurality of pin-pets and pin-pets formed on the semiconductor substrate. The pin-pet includes an active pattern, a gate insulating layer, and a gate electrode, and the active pattern includes a source region, a drain region, and a channel region disposed between the source region and the drain region, having an upper surface portion and a side portion. In addition, the gate insulating film is formed on the upper and side portions of the active pattern, and the gate electrode is disposed to cross the active pattern on the gate insulating film covering the channel region. At this time, the impurity regions formed in the same active pattern among the impurity regions disposed between two adjacent gate electrodes are connected together in one wiring structure. |