http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050101990-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2004-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc14b9696e47098100817350d013e2ac |
| publicationDate | 2005-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050101990-A |
| titleOfInvention | Mothod for fabiricating a sti in semiconductor device |
| abstract | The present invention improves device reliability by depositing primary high density plasma oxide and then performing oxide recess to reduce aspect ratio, removing liner nitride in the trench top corner, and depositing secondary high density plasma oxide. Disclosed is a STI forming method of a semiconductor device.n n n A method of forming an STI of a semiconductor device according to the present invention includes a first step of forming a trench after laminating thermal oxide and pad nitride on a silicon substrate; Forming a wall oxide and a liner nitride in the trench; Depositing a first high density plasma oxide on the liner nitride; A fourth step of recessing the first high density plasma oxide to a height of about the wall oxide by etching using a photoresist; A fifth step of selectively etching the liner nitride exposed by recessing the first high density plasma oxide by wet etching; And a sixth step of gapfilling the inside of the trench with a secondary high density plasma oxide. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102420140-A |
| priorityDate | 2004-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.