http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050098620-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E03C1-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2004-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6671ec65136fd8f8a475a858985c84a |
| publicationDate | 2005-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050098620-A |
| titleOfInvention | Exposure apparatus for fabricating semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus used for a photolithography process in the manufacture of a semiconductor device. The exposure apparatus according to the present invention includes a reticle having a source pattern formed thereon for transferring a photoresist film coated on a wafer into a predetermined pattern; An exposure unit having a reduced projection lens for reducing and projecting the light passing through the reticle, a stepper chamber in which the exposure unit is installed, a wafer stage on which the wafer is located, and a gas measuring device capable of monitoring gas in the stepper chamber Equipped. According to the present invention, by grasping the degree of contamination of the gas has the effect of preventing or minimizing the process failure. |
| priorityDate | 2004-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.