| abstract |
The present invention relates to a method for polishing a silicon-containing dielectric layer comprising using a chemical-mechanical polishing system comprising (a) inorganic polishing, (b) polishing additives, and (c) a liquid carrier. The composition has a pH of about 4 to about 6. The polishing additive comprises a functional group having a pK a of about 3 to about 9 and includes arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acid, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated Monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof. The present invention also relates to a chemical-mechanical polishing system, wherein the inorganic soft erase is ceria. |