http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050097051-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02172 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate | 2004-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e61e424b412de5a8e83582e8a07f6b07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25e35fbcfb22d345cdecf56b78a6cd8d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f749ce17c9af72321ba2853a252ccaba |
| publicationDate | 2005-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050097051-A |
| titleOfInvention | Method of transparent electrode for ohmic contact to p-algainn compound semiconductor using zinc oxide |
| abstract | In the method of forming an ohmic contact transparent electrode layer according to the present invention, a zinc oxide layer is deposited on a p-Al x Ga y In z N (0 ≦ x, y, z ≦ 1, x + y + z = 1) compound semiconductor layer. The resultant is heat-treated at a temperature in a range of 100 to 1200 ° C. such that the zinc oxide layer is in ohmic contact with the p-Al x Ga y In z N compound semiconductor layer 120. The heat treatment is preferably performed in an atmosphere containing at least one selected from the group consisting of argon, nitrogen and oxygen. The zinc oxide layer may include at least one selected from the group consisting of indium oxide, tin oxide, gallium oxide, and aluminum oxide as impurities. The zinc oxide layer may have a thickness of 1 ~ 1000nm. The heat treatment is preferably performed for 1 second to 3 hours. By using the zinc oxide layer as the transparent electrode layer, it is possible to manufacture a light emitting device having excellent light emission efficiency due to the excellent thermal stability and light transmittance of the zinc oxide, it is possible to prevent the degradation of the characteristics of the light emitting device by high temperature heat treatment. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8176653-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100682741-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100870838-B1 |
| priorityDate | 2004-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.