http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050096384-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2004-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f876390f8685a130bf967788ff949f75 |
| publicationDate | 2005-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050096384-A |
| titleOfInvention | Method for forming an isolation in a semiconductor device |
| abstract | A device isolation film formation method of a semiconductor device is disclosed. A trench is formed in the substrate having the cell region and the ferry region, and a nitride film liner is formed only on the trench sidewalls and the bottom surface of the cell region, and then the dense plasma oxide film is sufficiently filled in the trenches of the cell region and the ferry region. Therefore, it is possible to sufficiently reduce bubble-type defects mainly observed in the ferry region by stress mismatch between the nitride film liner and the high density plasma oxide film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100546161-B1 |
| priorityDate | 2004-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 13.