http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050094834-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-1135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L65-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D165-00
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L65-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D165-00
filingDate 2004-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9a895c5fb8d75c29bbb82eec462f91b
publicationDate 2005-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20050094834-A
titleOfInvention High resistance poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) for use in high efficiency pixellated electroluminescent devices
abstract A high resistivity PEDT / PSS buffer layer is provided for electroluminescent devices such as OLEDs. According to another embodiment, an OLED is provided comprising a high resistivity PEDT / PSS buffer layer. According to a further embodiment, a method is developed to reduce the conductivity of a PEDT / PSS layer cast from the aqueous solution on a substrate by adding it to an aqueous PEDT / PSS solution before casting the cyclic ether cosolvent. In one embodiment, a method of reducing the intrinsic conductivity of a PEDT / PSS layer cast on a substrate is provided such that the material can be used as an intermediate buffer layer in red, green, and blue organic light emitting diodes (RGB OLEDs).
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170074695-A
priorityDate 2003-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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