| abstract |
The present invention relates to a nitride-based light emitting device and a manufacturing method thereof, the light emitting device has a structure in which a substrate, an n-type cladding layer, an active layer, a p-type cladding layer, a lattice cell layer and an ohmic contact layer are sequentially stacked, The silver conductive material is formed of a particulate cell having a size of 30 micrometers or less and embedded in the ohmic contact layer to be spaced apart from each other. The ohmic contact with the p-type cladding layer is improved to improve luminous efficiency and device life, and the activation process can be omitted after wafer growth, thereby providing an advantage of simplifying the manufacturing process. |