| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-15192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-06226 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0428 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 |
| filingDate |
2003-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01d3ec641932551b26647dd249bcbc4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a75f0b4facd9cc214599c9f9f7dcdf7f |
| publicationDate |
2005-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20050086522-A |
| titleOfInvention |
High speed data channel including a cmos vcsel driver and a high performance photodetector and cmos photoreceiver |
| abstract |
A high speed data channel is disclosed that includes an optical driver and a photodetector in a CMOS optical receiver. The optical channel driver includes a FET driver circuit and a VCSEL diode that drives a passive element (eg, an integrated loop inductor). The VCSEL diode is biased by bias supply. The integrated loop inductor may be integrated in CMOS technology and may be integrated on the same IC chip as both FET drivers and VCSEL diodes. The photodetector is a semiconductor layer on the insulating layer, that is, SOI. One or more ultra thin metal electrodes (<2000 μs) on the silicon layer form a Schottky barrier diode junction, which in turn forms a quantum well comprising a two-dimensional electrode gas between the ultra thin metal electrode and the Schottky barrier diode junction. |
| priorityDate |
2002-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |