| abstract |
The method of fabricating uniform nanotubes is described as synthesizing sheaths on nanowire templates, such as nanotubes using chemical vapor deposition processes. For example, a single crystalline zinc oxide (ZnO) nanowire is used as a template in which gallium nitride (GaN) grows epitaxially. Then, by thermal reduction and evaporation, the ZnO template is removed. The finished single crystalline GaN nanotube preferably has an inner diameter in the range of 30 nm to 200 nm and a wall thickness between 5 and 50 nm. Electron microscopy studies show that the resulting nanotubes are single crystalline with fibrous zinc structure and are oriented along the <001> direction. The present invention illustrates a single crystalline nanotube of a material having a layerless crystal structure. Similar "epitaxial-casting" approaches can be used to produce single crystalline nanotubes of arrays and other solid materials and semiconductors. In addition, the fabrication of multiple sheath nanotubes as well as nanotubes having multiple vertical compartments is described. |