http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050085417-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-28 |
| filingDate | 2003-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b22aa3d0e8b2b27d8ee501182388801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c144a4ef339602c4ed6d9887d8f9c072 |
| publicationDate | 2005-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050085417-A |
| titleOfInvention | Self aligned memory element and wordline |
| abstract | An organic polymer memory cell is provided having an organic polymer layer 116, 2108, 2132, 2168 and an electrode layer formed over a first conductive (eg copper) layer (eg bitline) 104, 108. The memory cell is connected to a second conductive layer (e.g., forming a wordline) 136, 2148, 2160, and more specifically the top of the electrode layer of the memory cell is connected to the second conductive layer. Optionally, conduction promotion layers 112 and 2136 are formed over the conducting layer. Dielectric material separates the memory cells. The memory cells are self-aligned with bit lines formed in the first conductive layer and word lines formed in the second conductive layer. |
| priorityDate | 2002-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 85.