| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_791bfde4d7e57aaa2b93c13f6472b7da |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-843 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-12 |
| filingDate |
2003-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53ecec1000f1a100ee1abddce8abba63
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdaffe9b16fab67f2536e76889bbdf9a |
| publicationDate |
2005-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20050085073-A |
| titleOfInvention |
Method for forming carbon nanotubes |
| abstract |
Plasma chemical vapor deposition is used to form carbon nanotubes on the surface of the substrate. After the nanotubes are grown, a post-treatment step is performed on the newly formed nanotube structures. Post-treatment removes graphite and other carbon particles from the grown nanotube walls and controls the thickness of the nanotube layer. Post-treatment is carried out using plasma at the same substrate temperature. For workup, a hydrogen-containing gas is used as the plasma feed gas. During the transition from stopping nanotube growth to the post-treatment step, the pressure in the plasma processing chamber is stabilized with the purge gas described above without turning off the plasma in the chamber. This eliminates the need to purge and empty the plasma process chamber. |
| priorityDate |
2002-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |