http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050080299-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f6f175f2c8eac40363953838045e7c40 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0264 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate | 2004-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80c7170103fc6baa69e88cea25da8525 |
| publicationDate | 2005-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050080299-A |
| titleOfInvention | Semiconductor laser diode and method for manufacturing the same |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser diode and a method of manufacturing the same, wherein the bandgap of the active layer region corresponding to the lower part of the optical waveguide is made smaller than the bandgap of the active layer region except for the region, so that the current range capable of oscillating in a single mode In addition, the present invention provides a first process of sequentially forming an n-clad layer, an active layer, a first p-clad layer, an etch stop layer, and a second p-clad layer on a substrate. ; Forming a ridge by etching a portion of the second p-clad layer according to a predetermined mask pattern; A third process of forming a predetermined dielectric film on an upper portion including the etch stop layer formed in the first process and the ridge formed in the second process; A fourth step of intermixing the dielectric film formed in the third step and the remaining areas of the active layer except for the area corresponding to the lower portion of the ridge and removing the dielectric film; A fifth process of forming a current blocking layer in the remaining region where the dielectric film is removed in the fourth process, except for a region corresponding to an upper portion of the ridge formed in the second process; A semiconductor laser diode fabricated through a sixth process of forming a p-pad layer in a region including the ridge formed in the second process and the upper portion of the current blocking layer formed in the fifth process is disclosed. |
| priorityDate | 2004-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.