abstract |
SUMMARY OF THE INVENTION The present invention provides a semiconductor device and a method of manufacturing the same, which can achieve high reliability by increasing the orientation of crystals constituting the lower electrode.n n n After the first interlayer insulating film 16 is formed, a SiO 2 cap film 17 is formed thereon, and degassing water in the first interlayer insulating film 16 and the SiO 2 cap film 17 is performed by heat treatment. Next, an Al 2 O 3 film 18 is formed on the SiO 2 cap film 17. Then, the Al 2 O 3 film 18 is heat-treated in an oxidizing atmosphere to promote oxidation of the surface thereof. Thereafter, a Pt film, a PLZT film, and an IrO 2 film are formed on the Al 2 O 3 film 18 and patterned to form the upper electrode 24, the capacitor insulating film 23, and the lower electrode 22. To form a ferroelectric capacitor having a. |