http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050069604-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_efd77c1983329ca444312479161a8c18 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2003-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a86ec428f5db61a5f07586e14ed5727 |
| publicationDate | 2005-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050069604-A |
| titleOfInvention | Method for forming isolation layer of semiconductor device |
| abstract | Disclosed is a method of forming a device isolation layer of a semiconductor device capable of preventing leakage current and a hump phenomenon due to erosion of the device isolation layer to improve electrical characteristics of the device. This method includes forming a pad oxide film and a nitride film sequentially on a semiconductor substrate, etching the nitride film and the pad oxide film in an inactive region to expose the semiconductor substrate, etching the semiconductor substrate to form a trench, and insulating the trench. Landfilling the material, and removing the nitride film using a mixture of sulfuric acid (H 2 SO 4 ) solution and hydrogen peroxide solution (H 2 O 2 ). |
| priorityDate | 2003-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.