http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050069427-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_efd77c1983329ca444312479161a8c18 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2003-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e84daba60fba38c997ede8721fd4e3db |
| publicationDate | 2005-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050069427-A |
| titleOfInvention | Method for fabricating shallow trench isolation |
| abstract | The present invention relates to a method of forming an isolation layer in which a second trench is formed on a bottom surface of a first trench, and a second trench and a first trench are buried so that an air gap is formed in the second trench.n n n The method of forming an isolation layer of the present invention comprises the steps of sequentially forming a first insulating film and a second insulating film on a substrate; Forming a pattern on the second insulating layer, and forming a first trench using the pattern; Forming a third insulating film on the substrate; Forming polysilicon on the third insulating film; Etching the entire polysilicon to form a hard mask; Forming a second trench in the bottom of the first trench using the hard mask; Removing the hard mask and the third insulating layer; Forming a fourth insulating layer in the first trench and the second trench; Filling an air gap in the first trench while filling the first trench and the second trench with a fifth insulating layer; And planarizing the fifth insulating layer and removing the first insulating layer and the second insulating layer.n n n Accordingly, the method of forming the isolation layer of the present invention forms the first trench and the second trench and forms an air gap in the second trench, thereby preventing oxide voids due to incomplete filling and reducing the dielectric constant of the isolation layer. It is effective to maximize the effect. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7977205-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100760908-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7736991-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100810409-B1 |
| priorityDate | 2003-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.