| abstract |
The present invention relates to a tungsten wire polishing CMP slurry, and more particularly, to a tungsten wire polishing CMP slurry containing peroxide compound, alcohol, carboxylic acid, linoleic acid, inorganic oxidizing agent, metal complex, pH adjusting agent and deionized water. According to the present invention, defects such as scratches and residual particles may be prevented during the CMP process of the tungsten wiring, and the storage stability may be improved by preventing sedimentation and aggregation of the abrasive grains of the metal oxide. |