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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e8c30577b8448aefa0a1e7ce9609c00
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publicationDate 2005-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20050065889-A
titleOfInvention Silicon nitride thin film for optical device and fabrication method thereof
abstract The present invention provides a silicon nitride thin film for an optical device and a method for manufacturing the same, wherein the amorphous silicon quantum dots and rare earth elements are dispersed and included together and the rare earth elements are excited by the amorphous silicon quantum dots to emit light. By using this, an amorphous silicon quantum dot can greatly improve the light emitting characteristics of the rare earth element, thereby making an optical device having excellent performance.
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