| abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nitride based light emitting device and a method of manufacturing the same. In the nitride based light emitting device, a substrate, an n-type cladding layer, an active layer, a p-type cladding layer, and a multi-ohmic contact layer are sequentially stacked. The first transparent thin film layer / silver / second transparent thin film layer is formed. According to such a nitride-based light emitting device and a manufacturing method thereof, the ohmic contact property with the p-type cladding layer is improved to provide excellent current-voltage characteristics, and the light emitting efficiency of the device can be improved due to the high light transmittance of the transparent electrode. have. |