http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050064332-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f1cdac90c4272d2ed510122d7153738
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
filingDate 2003-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98632c077e25f0ba1227860dda6776d5
publicationDate 2005-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20050064332-A
titleOfInvention Method for forming element isolation layer of semiconductor device
abstract The present invention discloses a device isolation film formation method using a shallow trench isolation (STI) process. The disclosed invention comprises the steps of sequentially forming a pad oxide film, a pad nitride film, an antireflection film, and a photosensitive film pattern on a silicon substrate; Etching the diffuse reflection prevention film, the pad nitride film, and the pad oxide film to expose a substrate; Overetching a portion of the thickness of the substrate surface under conditions in which polymer is accumulated on the exposed substrate surface edge; Etching the exposed substrate portion to form a trench; Removing the antireflection film; Forming an oxide film on the surface of the pad nitride film and the trench surface by performing an oxygen ion implantation process on the substrate product; Removing an oxide film on the surface of the pad nitride film; Forming an HDP oxide film on a substrate resultant to fill the trench; CMPing the HDP oxide film to expose the pad nitride film; And removing the pad nitride film.
priorityDate 2003-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 18.