http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050063650-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-30 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/D21J3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-57 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B30B15-0082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/D21J7-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-479 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-326 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate | 2004-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95934764b369af7c09154a6161575fa0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea343498cf889e0b13646f8fb5526d96 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0829be672e0a54ac34daf76a2b3d6df3 |
| publicationDate | 2005-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050063650-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | An object of the present invention is to provide a method for manufacturing a semiconductor device which can recover deterioration of a ferroelectric film with high efficiency. An Al 2 O 3 film 6 covering the ferroelectric capacitor is formed by the sputtering method. The thickness of the Al 2 O 3 film 6 is preferably optimized in accordance with the residual polarization amount and the fatigue resistance required for the ferroelectric capacitor, for example, 10 nm to 100 nm. Subsequently, heat treatment is performed in an oxygen atmosphere to supply oxygen to the PZT film 4 through the Al 2 O 3 film 6. As a result, oxygen deficiency in the PZT film 4 is preserved. At this time, evaporation of Pb in the PZT film 4 is suppressed by the Al 2 O 3 film 6, and deterioration of fatigue resistance sensitive to a decrease in Pb amount is suppressed. Next, an Al 2 O 3 film 7 is formed by the sputtering method as a second protective film against deterioration factors in a later step. The thickness of the Al 2 O 3 film 7 is preferably such that the ferroelectric capacitor can be sufficiently protected from deterioration factors in the subsequent wiring step. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100852413-B1 |
| priorityDate | 2003-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.