| abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical structure semiconductor light emitting device, wherein a diode is formed on an first substrate by an epitaxial process, a bonding metal layer is formed as a surface layer, and a conductive second substrate having a bonding metal layer is prepared to face the bonding metal layer. After bonding the two substrates to each other, the first substrate is separated by a laser separation process to manufacture a light emitting diode. In this way, a vertical light emitting device is produced, which reduces the resistance and thereby improves reliability, increases the light output due to the reflection of the bonding metal to light, increases the yield and yield during chip manufacturing, and reduces the process cost. Brings |