http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050063308-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-97 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00 |
| filingDate | 2003-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b35ecd8819c38935d88770460cf4ce5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_991242cd8fae45f36b3f1fc2e52df15d |
| publicationDate | 2005-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050063308-A |
| titleOfInvention | Method for fabrication of semiconductor device |
| abstract | The present invention is to provide a method for manufacturing a semiconductor device that can suppress the occurrence of defects due to deterioration of the insulating properties during the cleaning process for expanding the contact opening, to this end, the present invention, a first hard mask on the first conductive layer / Forming a plurality of first conductive patterns of the first conductive film structure; Forming a first insulating layer having excellent gap-fill characteristics on the first conductive pattern to have a height between the first conductive layer and the first hard mask; Forming a second insulating layer on the first insulating layer that is more etch resistant to a cleaning solution containing hydrofluoric acid or BOE (Buffered Oxide Etchant) than the first insulating layer; Forming a second conductive layer penetrating the second insulating layer and the first insulating layer and contacting the first conductive layer between the first conductive pattern; Forming a third insulating layer on the second conductive layer, the third insulating layer having stronger etching resistance to the cleaning liquid than the first insulating layer; Forming a plurality of second conductive patterns having a second hard mask / second conductive film structure on the third smoke film; Forming a fourth insulating layer on the entire surface of the substrate including the second conductive pattern, the fourth insulating layer having stronger etching resistance to the cleaning liquid than the first insulating layer; And forming a third conductive layer contacting the second conductive layer through the fourth insulating layer and the third insulating layer between the second conductive patterns. |
| priorityDate | 2003-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.