http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050063046-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-09 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2003-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30b9692480596eff3075d4287c2e720d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e512eebb3bc59a659754dd4df56f7c31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_396c7c6033ca93d6feaa5278568531f2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e73f98f85e3a53c4574da0e67c10637 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3681cd4c46cf1a2c86c71968a830c15 |
| publicationDate | 2005-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050063046-A |
| titleOfInvention | Method for forming isolation layer of semiconductor device |
| abstract | The present invention discloses a method for forming a device isolation film of a semiconductor device. The method of forming a device isolation film of a semiconductor device according to the present disclosure includes sequentially forming a pad oxide film and a pad nitride film on a silicon substrate, forming a trench by etching the pad nitride film, the pad oxide film, and the silicon substrate. Thermally oxidizing the substrate to form a sidewall oxide film on the trench surface, nitriding the sidewall oxide film with NH3 annealing, depositing a linear aluminum nitride film on the entire surface of the substrate including the nitrided sidewall oxide film; And depositing a buried oxide film so as to fill the trench on the linear aluminum nitride film, chemically polishing the buried oxide film (CMP), and removing the pad nitride film. |
| priorityDate | 2003-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.