http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050062919-A

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filingDate 2003-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2432b3e9d16f3a6f707f0c9ea44eb278
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publicationDate 2005-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20050062919-A
titleOfInvention Method for forming capacitor of semiconductor device
abstract The present invention relates to a method of forming a capacitor of a semiconductor device, comprising: forming an etch stop nitride film on an entire surface of a semiconductor substrate having a bit line and a storage electrode contact plug, and forming an oxide film for a storage electrode on the etch stop nitride film And selectively etching the storage electrode oxide film and the etch stop nitride film to define a storage electrode region, forming a storage electrode over the entire surface of the structure, and filling the buried nitride film over the entire surface of the structure. And forming a storage electrode by performing a CMP process on the buried nitride film and the storage electrode using the storage oxide oxide as an etch stop layer, and removing the remaining buried nitride film from the resultant. A method of forming a capacitor of a semiconductor device is disclosed.
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