http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050060265-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-84 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2003-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_013592664d4db8f9d4e18bd63d97c10d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0e76e41451df00d84d4707e71a20b12 |
| publicationDate | 2005-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050060265-A |
| titleOfInvention | Method of manufacturing capacitor for semiconductor device |
| abstract | The present invention provides a method for manufacturing a capacitor of a semiconductor device that can simplify the process, reduce the manufacturing cost and at the same time easily secure sufficient capacitance corresponding to high integration.n n n The present invention provides a method for manufacturing a semiconductor device comprising: forming a lower electrode contact of a single structure separated by an interlayer insulating film on a semiconductor substrate; Forming a capacitor insulating film on the front surface of the substrate; Etching the capacitor insulating film to partially expose the lower electrode contact and the interlayer insulating film to form an elliptical hole for forming the capacitor; Forming a lower electrode material film on a surface of the capacitor insulating film including a hole; And forming a lower electrode having an elliptic structure by separating the lower electrode material film. |
| priorityDate | 2003-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.